CD825

1N821 THRU 1N829 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/159 MONOLITHIC TEMPERATURE COMPENSATED ZENER REFERENCE CHIPS ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE ELECTRICALLY EQUIVALENT TO 1N821 THRU 1N829 COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES, WITH THE EXCEPTION OF SOLDER REFLOW MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C CD821 thru CD829A REVERSE LEAKAGE CURRENT lR = 2 µA @ 25°C & VR = 3 Vdc 22 MILS ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified. -55° TO +100° VOLTAGE EFFECTIVE TEMPERATURE TEMPERATURE STABILITY COEFFICIENT ∆VZT (Note 2) mV 96 96 48 48 19 19 20 9 9 10 5 5 % / °C 0.01 0.01 0.005 0.005 0.002 0.002 0.002 0.001 0.001 0.001 0.0005 0.0005 CDI TYPE NUMBER ZENER VOLTAGE V ZT @I ZT ZENER TEST CURRENT I ZT MAXIMUM ZENER IMPEDANCE ZZT (Note 1) Backside is not cathode and must be electrically isolated T = Metallization Test Pad VOLTS CD821 CD821A CD823 CD823A CD825 CD825A CD826 CD827 CD827A CD828 CD829 CD829A 5.9 - 6.5 5.9 - 6.5 5.9 - 6.5 5.9 - 6.5 5.9 - 6.5 5.9 - 6.5 5.9 - 6.5 5.9 - 6.5 5.9 - 6.5 6.2 - 6.9 5.9 - 6.5 5.9 - 6.5 mA 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 OHMS 15 10 15 10 15 10 15 15 10 15 15 10 DESIGN DATA METALLIZATION: Top: C (Cathode) ...................Al A (Anode) ...................... Al Back: .......................................Au AL THICKNESS .........25,000 Å Min GOLD THICKNESS......4,000 Å Min CHIP THICKNESS. ....