ACE5212A
N-Channel Enhancement Mode MOSFET
Description The ACE5212A is the N-Channel enhancement mode power field effect...
ACE5212A
N-Channel Enhancement Mode MOSFET
Description The ACE5212A is the N-Channel enhancement mode power field effect
transistors are produced using
high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior
switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. Features
20V/0.65A, RDS(ON)=380mΩ@VGS=4.5V 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.45A, RDS(ON) =800mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability
Application
Drivers : Relays/Solenoids/Lamps/Hammers Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers
VER 1.1 1
ACE5212A
N-Channel Enhancement Mode MOSFET...
