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C2M0045170D Dataheets PDF



Part Number C2M0045170D
Manufacturers Cree
Logo Cree
Description Silicon Carbide Power MOSFET
Datasheet C2M0045170D DatasheetC2M0045170D Datasheet (PDF)

VDS 1700 V C2M0045170D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C 72 A RDS(on) 45 mΩ N-Channel Enhancement Mode Features Package • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Reduced Cooling Requirements • Increased Power Density • Increased System Switching Freq.

  C2M0045170D   C2M0045170D


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VDS 1700 V C2M0045170D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C 72 A RDS(on) 45 mΩ N-Channel Enhancement Mode Features Package • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Reduced Cooling Requirements • Increased Power Density • Increased System Switching Frequency TO-247-3 Applications • Solar Inverters • Switch Mode Power Supplies • High Voltage DC/DC converters • Motor Drive • Pulsed Power Applications Part Number C2M0045170D Package TO-247-3 Marking C2M0045170 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VDSmax VGSmax VGSop Drain - Source Voltage Gate - Source Voltage Gate - Source Voltage ID Continuous Drain Current ID(pulse) Pulsed .


BR93G86-3B C2M0045170D C3M0065090D


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