Document
VDS 1700 V
C2M0045170D
Silicon Carbide Power MOSFET TM
C2M MOSFET Technology
ID @ 25˚C
72 A
RDS(on) 45 mΩ
N-Channel Enhancement Mode
Features
Package
• High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Resistant to Latch-Up • Halogen Free, RoHS Compliant
Benefits • Higher System Efficiency • Reduced Cooling Requirements • Increased Power Density • Increased System Switching Frequency
TO-247-3
Applications • Solar Inverters • Switch Mode Power Supplies • High Voltage DC/DC converters • Motor Drive • Pulsed Power Applications
Part Number C2M0045170D
Package TO-247-3
Marking C2M0045170
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
Unit
Test Conditions
Note
VDSmax VGSmax VGSop
Drain - Source Voltage Gate - Source Voltage Gate - Source Voltage
ID Continuous Drain Current
ID(pulse) Pulsed .