C3M0065090J

C3M0065090J VDS ID @ 25˚C 900 V 35 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode Features New C3M SiC MOSFET technology New low impedance package with driver source pin High blocking voltage with low On-resistance Fast intrinsic diode with low reverse recovery (Qrr) Low output capacitance (60pF) Halogen free, RoHS compliant Wide creepage (~7mm) between drain and source Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Increase power density Increase system switching frequency Applications Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Package TAB Drain 1 2 34 5 6 7 G DS S S S S S Drain (TAB) Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Part Number C3M0065090J Package TO-263-7 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value VDSmax VGSmax VGSop Drain - Source Voltage Gate - Source Voltage (dynamic) Gate - Source Voltage (static) ID Continuous Drain Current 900 -8/+19 -4/+15 35 22 ID(pulse) Pulsed Drain Current 90 EAS Avalanche energy, Single pulse PD Power Dissipation TJ , Tstg Operating Junction and Storage Temperature TL Solder Temperature Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V 110 113 -55 to +150 260 Unit Test Conditions V VGS = 0 V, ID = 100 μA V AC ...