C3M0280090D

C3M0280090D Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enhancement Mode Features Package C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications Renewable energy Lighting High voltage DC/DC converters Telecom Power Supplies Induction Heating Part Number C3M0280090D Package TO-247-3 Marking C3M0280090 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions VDSmax VGSmax VGSop Drain - Source Voltage Gate - Source Voltage (dynamic) Gate - Source Voltage (static) ID Continuous Drain Current ID(pulse) Pulsed Drain Current 900 -8/+19 -4/+15 10.2 6.8 22 V VGS = 0 V, ID = 100 μA V AC (f >1 Hz) V Static VGS = 15 V, TC = 25˚C A VGS = 15 V, TC = 100˚C A Pulse width tP limited by Tjmax PD Power Dissipation TJ , Tstg Operating Junction and Storage Temperature TL Solder Temperature Md Mounting Torque Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V 45 -55 to +150 260 1 8.8 W TC=25˚C, TJ = 150 ˚C ˚C ˚C 1.6mm (0.063”) from case for 10s Nm lbf-in M3 or 6-32 screw Note Note: 1 Note: 2 Fig. 19 Fig. 22 Fig. 20 1 C3M0280090D ...