C3M0280090J

C3M0280090J Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enhancement Mode Features New C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances New low impedance package with driver source Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Wide creepage (~7mm) between drain and source Package TAB Drain Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications Renewable energy Lighting High voltage DC/DC converters Telecom Power Supplies Induction Heating 1 2 34 5 6 7 G KS S S S S S Drain (TAB) Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Part Number C3M0280090J Package TO-263-7 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value VDSmax VGSmax VGSop Drain - Source Voltage Gate - Source Voltage Gate - Source Voltage ID Continuous Drain Current 900 -8/+18 -4/+15 11 7 ID(pulse) Pulsed Drain Current 22 PD Power Dissipation TJ , Tstg Operating Junction and Storage Temperature TL Solder Temperature Note (1): MOSFET can also safely operate at 0/+15 V 49 -55 to +150 260 Unit Test Conditions V VGS = 0 V, ID = 100 μA V Absolute maximum values V Recommended operational values VGS = 15 V, TC = 25˚C A VGS = 15 V, TC = 100˚C A Pulse width tP limited by Tjmax W TC=25˚C, TJ = 150 ˚C ˚C ˚C 1.6...