CGHV60075D5
75 W, 6.0 GHz, GaN HEMT Die
Cree’s CGHV60075D5 is a gallium nitride (GaN) High Electron Mobility Transistor ...
CGHV60075D5
75 W, 6.0 GHz, GaN HEMT Die
Cree’s CGHV60075D5 is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs
transistors.
FEATURES
19 dB Typical Small Signal Gain at 4 GHz 17 dB Typical Small Signal Gain at 6 GHz 65% Typical Power Added Efficiency at 4 GHz 60% Typical Power Added Efficiency at 6 GHz 75 W Typical PSAT 50 V Operation High Breakdown Voltage Up to 6 GHz Operation
APPLICATIONS
2-Way Private Radio Broaband Amplifiers Cellular Infrastructure Test Instrumentation Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Packaging Information
Bare die are shipped on tape or in Gel-Pak® containers. No...
