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BTW69-1200N

STMicroelectronics

SCR thyristor

Product status link BTW69-1200N Product summary IT(RMS) 50 A VDRM/VRRM 1200 V IGT 50 mA BTW69-1200N Datasheet 50...


STMicroelectronics

BTW69-1200N

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Product status link BTW69-1200N Product summary IT(RMS) 50 A VDRM/VRRM 1200 V IGT 50 mA BTW69-1200N Datasheet 50 A – 1200 V non insulated SCR thyristor Features On-state rms current: 50 A Blocking voltage: 1200 V Gate current: 50 mA Application Solid state relays Battery charging system Uninterruptible power supply Variable speed motor drive Industrial welding systems By pass AC switch Description Available in non insulated TOP3 high power package, the BTW69-1200N is suitable for applications where power switching and power dissipation are critical, such as bypass switch, controlled AC rectifier bridge, in solid state relay, battery charger, uninterruptible power supply, welding equipment and motor driver applications. Based on a clip assembly technology, the BTW69-1200N offers a superior performance in surge current handling and thermal cooling capabilities. DS9690 - Rev 2 - July 2023 For further information contact your local STMicroelectronics sales office. www.st.com BTW69-1200N Characteristics 1 Characteristics Table 1. Absolute maximum ratings Symbol Parameters IT(RMS) RMS on-state current (180° conduction angle) Average on-state current IT(AV) (180° conduction angle) ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C, VR = 0 V) I2t I2t value for fusing Critical rate of rise of on-state current dl/dt Gate supply: IG = 100 mA, dIG/dt = 1 A/μs IGM Peak gate current PG(AV) Average gate power dissipation Tst...




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