03P2J Datasheet: SCR Thyristor





03P2J SCR Thyristor Datasheet

Part Number 03P2J
Description SCR Thyristor
Manufacture Kexin
Total Page 3 Pages
PDF Download Download 03P2J Datasheet PDF

Features: SMD Type SCR Thyristor 03P2J/03P4J/03P5 J Thyristor ■ Features ● High Ano de to Cathode Voltage VDRM,VRRM=200V(03 P2J) VDRM,VRRM=400V(03P4J) VDRM,VRRM=50 0V(03P5J) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Anode 3.Cathode ■ Absolut e Maximum Ratings Ta = 25℃ Parameter Symbol Repetitive Peak Reverse Volta ges @ IRRM=100uA VRRM Repetitive Peak Off-State Voltages @ IDRM=100uA VDRM Average on-state Current (Ta = 77℃Si ngle phase half wave) IT(AV) Forward Current RMS IT(RMS) Non-Repetitive Pe ak on-state Current (f=50Hz,1cycle) IT SM Circuit Fusing Considerations (1ms t ≤10ms) I2t Peak Gate Current Forward (f≥50Hz,duty≤10℅) IGF M Peak Gate Voltage ─ Reverse VGRM Peak Gate Power ─ Forward (f≥50Hz, duty≤10℅) PGM Average Gate Power ─ Forward Thermal Resistance Junction to Ambient Junction Temperature Storag e Temperature Range PGF(AV) Rth(j-a) T J Tstg ■ Electrical Characteristics (Ta = 25℃, unless otherwise noted.) 03P2J 200 200 03P4J 400.

Keywords: 03P2J, datasheet, pdf, Kexin, SCR, Thyristor, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

SMD Type
SCR Thyristor
03P2J/03P4J/03P5J
Thyristor
Features
High Anode to Cathode Voltage
VDRM,VRRM=200V(03P2J)
VDRM,VRRM=400V(03P4J)
VDRM,VRRM=500V(03P5J)
1.70 0.1
0.42 0.1
0.46 0.1
1.Gate
2.Anode
3.Cathode
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Repetitive Peak Reverse Voltages @ IRRM=100uA
VRRM
Repetitive Peak Off-State Voltages @ IDRM=100uA
VDRM
Average on-state Current (Ta = 77Single phase half wave)
IT(AV)
Forward Current RMS
IT(RMS)
Non-Repetitive Peak on-state Current (f=50Hz,1cycle)
ITSM
Circuit Fusing Considerations (1mst 10ms)
I2t
Peak Gate Current Forward (f50Hz,duty10)
IGFM
Peak Gate Voltage Reverse
VGRM
Peak Gate Power Forward (f50Hz,duty10)
PGM
Average Gate Power Forward
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature Range
PGF(AV)
Rth(j-a)
TJ
Tstg
Electrical Characteristics (Ta = 25, unless otherwise noted.)
03P2J
200
200
03P4J
400
400
0.3
0.47
6
0.15
0.1
6
100
10
65
125
-55 to 150
03P5J
500
500
Unit
A
A2s
A
V
mW
/W
Parameter
Gate Non-Trigger Voltage
Off-state Leakage Current
On-state Voltage
Gate Trigger Voltage
Gate Trigger Current (Continuous dc)
Holding Current
Symbol
Test Conditions
VGD VDM=1/2VDRM,TJ = 125
ID,IR
VDRM=VRRM,RGK=1KΩ,Tj=25;
VDRM=VRRM,Tj=125;
VTM IT=1A
VGT VDM=6V, RL=100Ω
IGT VDM=6V, RL=100Ω
IH VD=12V, IT=1A
Min Typ. Max Unit
0.1 V
10
uA
100
1.6
V
0.8
200 μA
5 mA
Critical Rate of rise of off-state Voltage
dV/dt VDM=2/3VDRM, Tj=125
40 V/us
Circuit Commutated turn-off time
MhaFrEkiCnglassification
NO 03P2J
Marking
03P2J
03P4J
03P4J
tq
VD=2/3VDRM, Tj=125,TM=200mA;
VR25VdITM/dt=15A/us,dVD/dt=20V/us;
03P5J
03P5J
25 uS
www.kexin.com.cn 1

        






Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)