BR25H160-WC EEPROMs Datasheet

BR25H160-WC Datasheet, PDF, Equivalent


Part Number

BR25H160-WC

Description

Automotive Series Serial EEPROMs

Manufacture

Rohm

Total Page 30 Pages
Datasheet
Download BR25H160-WC Datasheet


BR25H160-WC
Datasheet
Automotive Series Serial EEPROMs
125°C SPI BUS ICs BR25xxxxFamily
BR25Hxxx-WC Series
(1K 2K 4K 8K 16K 32K)
Description
BR25Hxxx-WC series is a serial EEPROM of SPI BUS interface method.
Features
„ High Speed Clock Action Up to 5MHz (Max)
„ Wait Function by HOLDB Terminal.
„ Part or Whole of Memory Arrays Settable as Read
Only Memory Area by Program.
„ 2.5 to 5.5V single power source action most suitable
for battery use.
„ Page Write Mode Useful for Initial Value Write at
Factory Shipment.
„ Highly Reliable Connection by Au Pad and Au Wire.
„ For SPI Bus Interface (CPOL, CPHA)=(0, 0), (1, 1)
„ Auto Erase and Auto End Function at Data Rewrite.
„ Low Current Consumption
¾ At Write Action (5V) : 1.5mA (Typ)
¾ At Read Action (5V) : 1.0mA (Typ)
¾ At Standby Action (5V) : 0.1µA (Typ)
„ Address Auto Increment Function at Read Action
„ Write Mistake Prevention Function
¾ Write Prohibition at Power on.
¾ Write Prohibition by Command Code (WRDI).
¾ Write Prohibition by WPB Pin.
¾ Write Prohibition Block Setting by Status
Registers (BP1, BP0)
¾ Write Mistake Prevention Function at Low
Voltage.
„ Data at Shipment Memory Array: FFh, Status
Register WPEN, BP1, BP0 : 0
„ Data Kept for 40 Years.
„ Data Rewrite Up to 1,000,000 Times.
„ AEC-Q100 Qualified
Packages W(Typ) x D(Typ) x H(Max)
SOP8
5.00mm x 6.20mm x 1.71mm
SOP-J8
4.90mm x 6.00mm x 1.65mm
TSSOP-B8
3.00mm x 6.40mm x 1.20mm
Page Write
Number of pages
Product Number
16 Byte
BR25H010-WC
BR25H020-WC
BR25H040-WC
BR25Hxxx-WC Series
Capacity Bit Format
1Kbit
128×8
2Kbit
256×8
4Kbit
512×8
8Kbit
1K×8
16Kbit
2K×8
32Kbit
4Kx8
Type
BR25H010-WC
BR25H020-WC
BR25H040-WC
BR25H080-WC
BR25H160-WC
BR25H320-WC
32 Byte
BR25H080-WC
BR25H160-WC
BR25H320-WC
Power Source Voltage
2.5 to 5.5V
2.5 to 5.5V
2.5 to 5.5V
2.5 to 5.5V
2.5 to 5.5V
2.5 to 5.5V
SOP8
SOP-J8
TSSOP-B8
Product structureSilicon monolithic integrated circuit
.www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
This product is not designed protection against radioactive rays
1/29
TSZ02201-0R1R0G100060-1-2
31.Oct.2013 Rev.002

BR25H160-WC
BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)
Datasheet
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Remarks
Impressed Voltage
VCC
-0.3 to +6.5
V
Permissible
Dissipation
0.56 (SOP8)
When using at Ta=25°C or higher, 4.5mW to be reduced per 1°C
Pd
0.56 (SOP-J8)
W When using at Ta=25°C or higher, 4.5mW to be reduced per 1°C
0.41 (TSSOP-B8)
When using at Ta=25°C or higher, 3.3mW to be reduced per 1°C
Storage Temperature Range
Tstg
-65 to +150
°C
Operating Temperature
Range
Topr
-40 to +125
°C
Terminal Voltage
-
-0.3 to VCC+0.3
V
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Memory Cell Characteristics (VCC=2.5V to 5.5V)
Parameter
Number of Data Rewrite Times (Note1)
Data Hold Years (Note1)
(Note1) Not 100% TESTED
Min
1,000,000
500,000
300,000
40
20
Limits
Typ
-
-
-
-
-
Recommended Operating Ratings
Parameter
Symbol
Power Source Voltage
VCC
Input Voltage
VIN
Limits
2.5 to 5.5
0 to VCC
Unit
Max
Condition
- Times Ta85°C
- Times Ta105°C
- Times Ta125°C
- Years Ta25°C
- Years Ta125°C
Unit
V
Input / Output Capacity (Ta=25°C, Frequency=5MHz)
Parameter
Symbol
Min
Input Capacity (Note1)
Output Capacity (Note1)
CIN
COUT
-
-
(Note1) Not 100% TESTED
Max
8
8
Unit Conditions
pF VIN=GND
VOUT=GND
Electrical Characteristics (Unless otherwise specified, Ta=-40°C to +125°C, VCC=2.5V to 5.5V)
Parameter
Symbol
Limits
Min Typ Max
Unit
Conditions
“H” Input Voltage
VIH 0.7xVCC - VCC+0.3 V 2.5VVCC5.5V
“L” Input Voltage
VIL -0.3 - 0.3xVCC V 2.5VVCC5.5V
“L” Output Voltage
VOL 0 - 0.4 V IOL=2.1mA
“H” Output Voltage
VOH VCC-0.5 - VCC V IOH=-0.4mA
Input Leak Current
ILI -10 - 10 µA VIN=0 to VCC
Output Leak Current
ILO -10 - 10 µA VOUT=0 to VCC, CSB=VCC
VCC=2.5V, fSCK=5MHz, tE/W=5ms
ICC1 - - 2.0 mA VIH/VIL=0.9VCC/0.1VCC, SO=OPEN
Current Consumption at Write
Byte write, Page write, Write status register
Action
VCC=5.5V, fSCK=5MHz, tE/W=5ms
ICC2 - - 3.0 mA VIH/VIL=0.9VCC/0.1VCC, SO=OPEN
Byte write, Page write, Write status register
VCC=2.5V, fSCK=5MHz
ICC3 - - 1.5 mA VIH/VIL=0.9VCC/0.1VCC, SO=OPEN
Current Consumption at Read
Read, Read status register
Action
VCC=5.5V, fSCK=5MHz
ICC4 - - 2.0 mA VIH/VIL=0.9VCC/0.1VCC, SO=OPEN
Read, Read status register
Standby Current
VCC=5.5V
ISB - - 10 µA CSB=HOLDB=WPB=VCC, SCK=SI=VCC or =GND,
SO=OPEN
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
2/29
TSZ02201-0R1R0G100060-1-2
31.Oct.2013 Rev.002


Features NoNteRwecDoesmigmnesnded for Datasheet Automotive Series Serial EEPROMs 125° C SPI BUS ICs BR25xxxxFamily BR25Hxxx-W C Series (1K 2K 4K 8K 16K 32K) Descri ption BR25Hxxx-WC series is a serial EE PROM of SPI BUS interface method. Feat ures „ High Speed Clock Action Up to 5 MHz (Max) „ Wait Function by HOLDB Ter minal. „ Part or Whole of Memory Array s Settable as Read Only Memory Area by Program. „ 2.5 to 5.5V single power so urce action most suitable for battery u se. „ Page Write Mode Useful for Initi al Value Write at Factory Shipment. „ Highly Reliable Connection by Au Pad an d Au Wire. „ For SPI Bus Interface (CP OL, CPHA)=(0, 0), (1, 1) „ Auto Erase and Auto End Function at Data Rewrite. „ Low Current Consumption ¾ At Write Action (5V) : 1.5mA (Typ) ¾ At Read Ac tion (5V) : 1.0mA (Typ) ¾ At Standby A ction (5V) : 0.1µA (Typ) „ Address Au to Increment Function at Read Action „ Write Mistake Prevention Function ¾ W rite Prohibition at Power on. ¾ Write Prohibition by Command C.
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