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BYV32-200 Dataheets PDF



Part Number BYV32-200
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Ultrafast Rectifier
Datasheet BYV32-200 DatasheetBYV32-200 Datasheet (PDF)

Ultrafast Rectifier INCHANGE Semiconductor BYV32-200 FEATURES ·High surge capacity ·Low Forward Voltage ·Low Leakage Current ·150℃ Operating Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power supply-output rectification ·Power management ·Instrumentation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Volta.

  BYV32-200   BYV32-200


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Ultrafast Rectifier INCHANGE Semiconductor BYV32-200 FEATURES ·High surge capacity ·Low Forward Voltage ·Low Leakage Current ·150℃ Operating Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power supply-output rectification ·Power management ·Instrumentation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Per Leg (Rated VR) Total Device 200 8 16 V A IFM Peak Repetitive Forward Current (Rated VR, Square Wave,20kHz) Per Diode Leg 16 Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions halfwave, single phase, 60Hz) 100 A A TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semicond.


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