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S25FL129P

Cypress Semiconductor

128-Mbit 3.0 V Flash Memory

S25FL129P 128-Mbit 3.0 V Flash Memory This product is not recommended for new and current designs. For new and current ...


Cypress Semiconductor

S25FL129P

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Description
S25FL129P 128-Mbit 3.0 V Flash Memory This product is not recommended for new and current designs. For new and current designs, S25FL128S supersedes S25FL129P. This is the factory-recommended migration path. Please refer to the S25FL128S data sheet for specifications and ordering information. Distinctive Characteristics Architectural Advantages  Single power supply operation – Full voltage range: 2.7 to 3.6V read and write operations  Memory architecture – Uniform 64 KB sectors – Top or bottom parameter block (Two 64-KB sectors broken down into sixteen 4-KB sub-sectors each) – Uniform 256 KB sectors (no 4-KB sub-sectors) – 256-byte page size – Backward compatible with the S25FL128P (uniform 256 KB sector) device  Program – Page Program (up to 256 bytes) in 1.5 ms (typical) – Program operations are on a page by page basis – Accelerated programming mode via 9V W#/ACC pin – Quad Page Programming  Erase – Bulk erase function – Sector erase (SE) command...




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