SYNCHRONOUS DYNAMIC RAM
MSM56V16161N
2-Bank×524,288-Word×16-Bit SYNCHRONOUS DYNAMIC RAM
FEDD56V16161N-01 Issue Date : April 27, 2016
DESCRIPTI...
Description
MSM56V16161N
2-Bank×524,288-Word×16-Bit SYNCHRONOUS DYNAMIC RAM
FEDD56V16161N-01 Issue Date : April 27, 2016
DESCRIPTION
The MSM56V16161N is a 2-Bank 524,288-word 16-bit Synchronous dynamic RAM. The device operates at 3.3V. The inputs and outputs are LVTTL compatible.
FEATURES
Product Name Organization Address Size Power Supply VCC (Core) Power Supply VCCQ (I/O)
Interface Operating Frequency Operating Temperature
Function /CAS Latency Burst Length
Burst Type Write Mode
Refresh Package
MSM56V16161N 2Bank x 524,288Word x 16Bit
2,048Row x 256Column 3.3V0.3V 3.3V0.3V
LVTTL compatible Max. 166MHz (Speed Rank 6)
0 to 70°C Standard SDRAM command interface
2, 3 1, 2, 4, 8, Full page Sequential, Interleave
Burst, Single Auto-Refresh, 4,096cycle/64ms (0°C Ta 70°C), Self-Refresh 50-Pin Plastic TSOP(II) (Cu frame) (P-TSOP(2)50-400-0.80-ZK)
PRODUCT FAMILY
Family
MSM56V16161N -6 MSM56V16161N -7 MSM56V16161N -75 MSM56V16161N -10
Max. Frequency
166MHz 143MHz 133MHz 10...
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