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MD56V62160M-10TA Dataheets PDF



Part Number MD56V62160M-10TA
Manufacturers LAPIS
Logo LAPIS
Description SYNCHRONOUS DYNAMIC RAM
Datasheet MD56V62160M-10TA DatasheetMD56V62160M-10TA Datasheet (PDF)

MD56V62160M-xxTA 4-Bank×1,048,576-Word×16-Bit SYNCHRONOUS DYNAMIC RAM FEDD56V62160MTA-06 Issue Date : Feb. 12, 2014 DESCRIPTION The MD56V62160M-xxTA is a 4-Bank 1,048,576-word 16-bit Synchronous dynamic RAM fabricated in LAPIS Semiconductor’s silicon-gate CMOS technology. The device operates at 3.3V. The inputs and outputs are LVTTL compatible. FEATURES Product Name Organization Address Size Power Supply VCC (Core) Power Supply VCCQ (I/O) Interface Operating Frequency Operating Temperature F.

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MD56V62160M-xxTA 4-Bank×1,048,576-Word×16-Bit SYNCHRONOUS DYNAMIC RAM FEDD56V62160MTA-06 Issue Date : Feb. 12, 2014 DESCRIPTION The MD56V62160M-xxTA is a 4-Bank 1,048,576-word 16-bit Synchronous dynamic RAM fabricated in LAPIS Semiconductor’s silicon-gate CMOS technology. The device operates at 3.3V. The inputs and outputs are LVTTL compatible. FEATURES Product Name Organization Address Size Power Supply VCC (Core) Power Supply VCCQ (I/O) Interface Operating Frequency Operating Temperature Functions /CAS Latency Burst Length Burst Type Write Mode Refresh Package MD56V62160M-xxTA xx indicates speed rank. 4Bank x 1,048,576Word x 16Bit 4,096Row x 256Column 3.3V0.3V 3.3V0.3V LVTTL compatible Max. 143MHz (Speed Rank 7) 0 to 70°C General-purpose SDRAM command interface Mode register CL setting: 2, 3 Mode register BL setting:1, 2, 4, 8, Full page Mode register BT setting: Sequential, Interleave Mode register WM setting: Burst, Single Auto-Refresh: 4,096cycle/64ms(0 to 70°C) S.


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