Document
MD56V62160M-xxTA
4-Bank×1,048,576-Word×16-Bit SYNCHRONOUS DYNAMIC RAM
FEDD56V62160MTA-06
Issue Date : Feb. 12, 2014
DESCRIPTION
The MD56V62160M-xxTA is a 4-Bank 1,048,576-word 16-bit Synchronous dynamic RAM fabricated in LAPIS Semiconductor’s silicon-gate CMOS technology. The device operates at 3.3V. The inputs and outputs are LVTTL compatible.
FEATURES
Product Name
Organization Address Size Power Supply VCC (Core) Power Supply VCCQ (I/O)
Interface Operating Frequency Operating Temperature
Functions /CAS Latency Burst Length
Burst Type Write Mode
Refresh
Package
MD56V62160M-xxTA xx indicates speed rank.
4Bank x 1,048,576Word x 16Bit 4,096Row x 256Column
3.3V0.3V
3.3V0.3V LVTTL compatible Max. 143MHz (Speed Rank 7)
0 to 70°C General-purpose SDRAM command interface
Mode register CL setting: 2, 3 Mode register BL setting:1, 2, 4, 8, Full page Mode register BT setting: Sequential, Interleave
Mode register WM setting: Burst, Single
Auto-Refresh: 4,096cycle/64ms(0 to 70°C)
S.