Schottky Barrier Rectifier
FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction T...
Schottky Barrier Rectifier
FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overvoltage protection，High reliability ·100% avalanche tested ·RoHS product ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
HBR10100CT
APPLICATIONS ·High Frequency switch power Supply ·Free wheeling diodes and polarity protection applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRMS
VR
IF(AV)
IFSM
Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage
Average Rectified Forward Current (Per Leg) (Total)
Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions
100
5 10
80
V A A
TJ Junction Temperature
175 ℃
Tstg Storage Temperature Range
-40~150 ℃
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
Schottky Barrier Rectifier
INCHANGE Semiconductor
HBR1010...
