HG2N60 Datasheet (data sheet) PDF





HG2N60 Datasheet, N-Channel Mosfet Transistor

HG2N60   HG2N60  

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INCHANGE Semiconductor isc N-Channel Mos fet Transistor ·FEATURES ·Drain Curr ent –ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Dra in-Source On-Resistance : RDS(on) = 4.5 Ω(Max) ·Avalanche Energy Specified · Fast Switching ·Simple Drive Requireme nts ·DESCRITION ·High efficiency swi tch mode power supply. Charger UPS powe r supply. ·ABSOLUTE MAXIMUM RATINGS(T a=25℃) SYMBOL PARAMETER VDSS Drai n-Source Voltage VGS Gate-Source Volta ge-Continuous ID Drain Current-Continu ous IDM Drain Current-Single Plused P D Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg St orage Temperature isc Product Specification








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