MBR1080

Schottky Barrier Rectifier INCHANGE Semiconductor MBR1080 FEATURES ·Guard -Ring for Stress Protection ·Low Forward Voltage ·Low Power Loss/High Efficiency ·High Surge Capacity ·Low Stored Charge Majority Carrier Conduction ·Pb-Free Packages are Available ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ·Lead Temperature for Soldering Purposes: 260℃ Max. for 10 Seconds ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) IFRM IFSM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC= 133℃ Peak Repetitive Forward Current (Rated VR,Square Wave,20kHz) TC= 133℃ Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz) 80 10 20 150 V A A A TJ ...