MBR10L60CT

Schottky Barrier Rectifier INCHANGE Semiconductor MBR10L60CT FEATURES ·Low Forward Voltage ·Low Power Loss/High Efficiency ·High surge capability ·Guard -Ring for Stress Protection ·Pb-Free Packages are Available ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power Supply-output Rectification ·Power Management ·Instrumentation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) IFSM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) Average Rectified Forward Current (Rated VR) TC= 140℃ Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz) 60 5 10 200 V A A TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor MBR...