Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR10L60CT
FEATURES ·Low Forward Voltage ·Low Power Loss/High Effici...
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR10L60CT
FEATURES ·Low Forward Voltage ·Low Power Loss/High Efficiency ·High surge capability ·Guard -Ring for Stress Protection ·Pb-Free Packages are Available ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power Supply-output Rectification ·Power Management ·Instrumentation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR
IF(AV)
IFSM
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current (Rated VR)
Average Rectified Forward Current
(Rated VR) TC= 140℃
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz)
60 5 10 200
V A A
TJ Junction Temperature
-55~150 ℃
Tstg Storage Temperature Range
-65~175 ℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR...