Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR2060
FEATURES ·Metal of silicon rectifier, majonty carrier conduc...
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR2060
FEATURES ·Metal of silicon rectifier, majonty carrier conduction ·Guard ring for transient protection ·Low power loss high efficiency ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MAXIMUN RATINGS ·Operating Temperature: -55C to +150C ·Storage Temperature: -55C to +150C
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR
VR(RMS)
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltag
IF(AV) IFSM
Average Rectified Forward Current
(Rated VR) TC= 135℃
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz)
60 42 20 150
V V A A
TJ Junction Temperature
-55~150 ℃
Tstg Storage Temperature Range
-55~150 ℃
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Schottky Barrier Rectif...