isc Silicon PNP Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 70(Min) @ IC= -0.5A ·Low Collector Saturati...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 70(Min) @ IC= -0.5A ·Low Collector Saturation Voltage-
: VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ·Complement to the
NPN MJD200 ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for low voltage, low -power ,high-gain audio
amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-25
V
VEBO
Emitter-Base Voltage
-8
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
-10
A
IB
Base Current
Collector Power Dissipation
PC
Ta=25℃ Collector Power Dissipation
TC=25℃
Ti
Junction Temperature
-1
A
1.4 W
12.5
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
10 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 89.3 ℃/W
MJD210
isc Website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MJD210
MIN MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0
-25
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5 A ;IB= -50mA
-0.3
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2A ;IB= -0.2A
-0.75
V
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= -...