isc Silicon PNP Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage-
: VC...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.1 V(Max)@ IC = -4A ·Complement to Type MJD3055 ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-70
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
IB
Base Current
-6
A
Collector Power Dissipation @TC=25℃
20
PC
W
Collector Power Dissipation @TC=25℃ 1.75
Tj
Junction Tmperature
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE UNIT
Rth j-c Thermal Resistance,Junction to Case
6.25 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W
MJD2955
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A ;IB= -0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A ;IB= -3.3A
VBE(on) Base-Emitter On Voltage
IC= -4A ; VCE= -4V
ICEO
Collector Cutoff Current
VCE= -30V; IB= 0
ICBO
Collector Cutoff Cur...