MJD3055

isc Silicon NPN Power Transistor INCHANGE Semiconductor MJD3055 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type MJD2955 ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current 6 A Collector Power Dissipation@TC=25℃ 20 PC W Collector Power Dissipation@Ta=25℃ 1.75 Tj Junction Tmperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal Resistance,Junction to Case 6.25 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor MJD3055 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A ;IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 3.3A VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 4V ICEO Collector Cutoff ...