isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE=20-70@IC = 4A ·Colle...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8V(Max)@ IC = 4A ·Complement to Type TIP2955T ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
70
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-base Voltage
5
V
IC
Collector Current-Continuous
10
A
IC
Collector Current-Peak
12
A
IB
Base Current
4
A
PC
Collector Power Dissipation@TC=25℃
75
W
Tj
Junction Tmperature
150
℃
Tstg
Storage Temperature Range
-65~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE UNIT
Rth j-c Thermal Resistance,Junction to Case
1.67 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 70
℃/W
TIP3055T
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A
VBE(sat) Base-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage
IC= 4A; IB= 0.4A IC= 4A; VCE= 4V
ICEO
Collector Cutoff Current
ICBO
Col...
