TIP35CF

isc Silicon NPN Power Transistor TIP35CF DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·Complement to Type TIP36CF ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= 1.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 25 A ICM Collector Current-peak 40 A IB Base Current PC Collector Power Dissipation @ TC=25℃ Tj Junction Temperature 5 A 125 W 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TIP35CF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT *VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 100 V *VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A 1.8 V *VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A; IB= 5A 4.0 V *VBE(on)-1 Base-Emitter On Voltage IC= 15A ; VCE= 4V 2.0 V *VBE(on)-2 Base-Emitter On Voltage IC= 25A ; VCE= 4V ...