MOSFET Transistor. IRFZ24N Datasheet

IRFZ24N Transistor. Datasheet pdf. Equivalent

Part IRFZ24N
Description N-Channel MOSFET Transistor
Feature INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ24N FEATURES .
Manufacture Inchange Semiconductor
Datasheet
Download IRFZ24N Datasheet

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Recommendation Recommendation Datasheet IRFZ24N Datasheet




IRFZ24N
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFZ24N
FEATURES
·Drain Current –ID=17A@ TC=25
·Drain Source Voltage-
: VDSS= 55V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.07Ω(Max)
·Fast Switching
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
DESCRIPTION
·Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls, these
devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
Drain Current-Continuous@TC=25
ID
Drain Current-Continuous@TC=100
IDM Drain Current-Single Pluse
PD Total Dissipation @TC=25
TJ Max. Operating Junction Temperature
Tstg Storage Temperature
VALUE UNIT
55 V
±20
17
12
68
V
A
A
45 W
150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
Rth j-a Thermal Resistance, Junction to Ambient
MAX
3.3
62
UNIT
/W
/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark



IRFZ24N
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFZ24N
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
VSD Forward On-Voltage
VGS= 10V; ID= 10A
VGS= ±20V;VDS= 0
VDS= 55V; VGS= 0
VDS= 44V; VGS= 0; Tj= 150
IS= 10A; VGS= 0
MIN MAX UNIT
55 V
24V
0.07 Ω
±100
nA
25
250
μA
1.3 V
·
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark





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