IS46TR16640ED

IS43/46TR16640ED IS43/46TR81280ED 128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  High speed data transfer rates with system frequency up to 800 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable CAS WRITE latency (CWL) based on tCK  Programmable Burst Length: 4 and 8  Programmable Burst Sequence: Sequential or Interleave  BL switch on the fly  Auto Self Refresh(ASR)  Self Refresh Temperature(SRT) ECC  Single bit error correction (per 64-bits)  Restrictions on Burst Length and Data Mask OPTIONS  Configuration: 128Mx8 64Mx16  Package: 96-ball FBGA (9mm x 13mm) for x16 78-ball FBGA (8mm x 10.5mm) for x8 MARCH 2018  Refresh Interval: 7.8 μs (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 μs (8192 cycles/32 ms) Tc= 85°C to 105°C 1.95 μs (8192 cycles/16ms)Tc=105°C to 125°C  Partial Array Self Refresh  Asynchronous RESET pin  TDQS (Termination Data Strobe) supported (x8 only)  OCD (Off-Chip Driver Impedance Adjustment)  Dynamic ODT (On-Die Termination)  Driver strength : RZQ/7, RZQ/6 (RZQ = 240  )  Write Leveling  Operating temperature: Automotive, A1 (TC = -40°C to +95°C) Automotive, A2 (TC = -40°C to +105°C) Automotive, A3 (TC= -40°C to +125°C) ADDRESS TABLE Parameter Row Addressing Column Addressing Bank Addressing Page size Auto Precharge Addressing BL switch on the fly 128Mx8 A0-A13 A0-A9 BA0-2...