IS61VPS12836EC

IS61(4)LPS12836EC/IS61(4)VPS12836EC/IS61(4)LPS12832EC IS61(4)VPS12832EC/IS61(4)LPS25618EC/IS61(4)VPS25618EC 128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM APRIL 2017 FEATURES  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs and data outputs  Auto Power-down during deselect  Single cycle deselect  Snooze MODE for reduced-power standby  JEDEC 100-pin QFP, 165-ball BGA and 119- ball BGA packages  Power supply: LPS: VDD 3.3V (± 5%), VDDQ 3.3V/2.5V (± 5%) VPS: VDD 2.5V (± 5%), VDDQ 2.5V (± 5%)  JTAG Boundary Scan for BGA packages  Industrial and Automotive temperature support  Lead-free available  Error Detection and Error Correction FAST ACCESS TIME Symbol tKQ tKC fMAX Parameter Clock Access Time Cycle time Frequency DESCRIPTION The 4Mb product family features high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61(64)LPS/VPS12836EC are organized as 131,072 words by 36bits. The IS61(64)LPS/VPS12832EC are organized as 131,072 words by 32bits. The IS61(64)LPS/VPS25618EC are organized as 262,144 words by 18 bits. Fabricated with ISSI's advanced CMOS technology, the device integrates a 2-bit burst counter, h...