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AT49F004T Dataheets PDF



Part Number AT49F004T
Manufacturers ATMEL
Logo ATMEL
Description 4-Megabit Flash Memory
Datasheet AT49F004T DatasheetAT49F004T Datasheet (PDF)

Features • Single Voltage Operation – 5V Read – 5V Programming • Fast Read Access Time - 55 ns • Internal Erase/Program Control • Sector Architecture – One 8K Words (16K bytes) Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks – One 240K Words (480K bytes) Main Memory Array Block • Fast Sector Erase Time - 10 seconds • Byte-by-Byte or Word-By-Word Programming - 10 µs Typical • Hardware Data Protection • DATA Polling For End Of Program Detection • Low-Power Dissipatio.

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Features • Single Voltage Operation – 5V Read – 5V Programming • Fast Read Access Time - 55 ns • Internal Erase/Program Control • Sector Architecture – One 8K Words (16K bytes) Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks – One 240K Words (480K bytes) Main Memory Array Block • Fast Sector Erase Time - 10 seconds • Byte-by-Byte or Word-By-Word Programming - 10 µs Typical • Hardware Data Protection • DATA Polling For End Of Program Detection • Low-Power Dissipation – 50 mA Active Current – 300 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49F004(T) and AT49F4096A(T) are 5-volt, 4-megabit Flash Memories organized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 55 ns with power dissipation of just 275 mW. When deselected, the CMOS standby current is less than 300 µA. The device .


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