AT49F1604T

Features 4.5V to 5.5V Read/Write Access Time – 90 ns Sector Erase Architecture – Thirty 32K Word (64K byte) Sectors with Individual Write Lockout – Eight 4K Word (8K byte) Sectors with Individual Write Lockout – Two 16K Word (32K byte) Sectors with Individual Write Lockout Fast Word Program Time – 10 µs Fast Sector Erase Time – 200 ms Dual-plane Organization, Permitting Concurrent Read while Program/Erase Memory Plane A: Eight 4K Word, Two 16K Word and Six 32K Word Sectors Memory Plane B: Twenty-four 32K Word Sectors Erase Suspend Capability – Supports Reading/Programming Data from Any Sector by Suspending Erase of Any Different Sector Low-power Operation – 60 mA Active – 3 mA Standby DATA Polling, Toggle Bit, Ready/Busy for End of Program Detection RESET Input for Device Initialization Sector Program Unlock Command TSOP, CBGA and µBGA Package Options Top or Bottom Boot Block Configuration Available Description Th...