Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR10200
FEATURES ·Metal silicon junction,majority carrier conductio...
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR10200
FEATURES ·Metal silicon junction,majority carrier conduction ·Low Power Loss/High Efficiency ·High current capability,low forward voltage drop ·High surge capability ·Guardring for overvoltage protection ·High temperature soldering guaranteed ·RoHS product ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low-voltage,high frequency inverters,free wheeling
and polarrity protection applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR IF(AV)
IFRM
IFSM
IRRM
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current (Rated VR)
Peak Repetitive Forward Current
(Rated VR,Square Wave,20kHz) TC= 135℃
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz)
Peak Repetitive Reverse Surge Current (20μs, 1.0kHz)
200 ...