Barrier Rectifier. MBR16150CT Datasheet

MBR16150CT Rectifier. Datasheet pdf. Equivalent


Inchange Semiconductor MBR16150CT
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR16150CT
FEATURES
·Metal of silicon rectifier, majonty carrier conduction
·Guard ring for transient protection
·Low power loss high efficiency
·High current capability,low VF
·High surge capacity
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
· Designed for in low voltage,high frequency invertersfree
wheeling,and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
VR(RMS)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltag
IF(AV)
IFSM
Average Rectified Forward Current
(Rated VR) TC= 125
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions half-
wave, single phase, 60Hz)
150
105
16
150
V
V
A
A
TJ Junction Temperature
-55~150
Tstg Storage Temperature Range
-55~175
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MBR16150CT Datasheet
Recommendation MBR16150CT Datasheet
Part MBR16150CT
Description Schottky Barrier Rectifier
Feature MBR16150CT; Schottky Barrier Rectifier INCHANGE Semiconductor MBR16150CT FEATURES ·Metal of silicon rectifier,.
Manufacture Inchange Semiconductor
Datasheet
Download MBR16150CT Datasheet




Inchange Semiconductor MBR16150CT
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR16150CT
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX
3.0
UNIT
/W
ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle2%)
SYMBOL
PARAMETER
CONDITIONS
VF
Maximum Instantaneous Forward Voltage
IF= 8A ; TC= 25
IF= 8A ; TC= 125
IR
Maximum Instantaneous Reverse Current
Rated DC Voltage, TC= 25
Rated DC Voltage, TC= 125
MAX
1.05
0.92
0.1
5.0
UNIT
V
mA
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark







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