Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR16150CT
FEATURES ·Metal of silicon rectifier, majonty carrier con...
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR16150CT
FEATURES ·Metal of silicon rectifier, majonty carrier conduction ·Guard ring for transient protection ·Low power loss high efficiency ·High current capability,low VF ·High surge capacity ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS · Designed for in low voltage,high frequency inverters,free
wheeling,and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR
VR(RMS)
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltag
IF(AV) IFSM
Average Rectified Forward Current
(Rated VR) TC= 125℃
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz)
150 105 16 150
V V A A
TJ Junction Temperature
-55~150 ℃
Tstg Storage Temperature Range
-55~175 ℃
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