MBR16200CT

Schottky Barrier Rectifier INCHANGE Semiconductor MBR16200CT FEATURES ·Low power loss ,high efficiency ·Low Forward Voltage ·High surge capacity ·Pb-Free Packages are Available ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for in low voltage,high frequency inverters，free wheeling,and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR VR(RMS) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltag IF(AV) IFSM Average Rectified Forward Current (Rated VR) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz) 200 140 16 150 V V A A TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor ...