MBR2550CT

INCHANGE Semiconductor Schottky Barrier Rectifier Product Specification MBR2550CT FEATURES ·Low power loss, high efficiency. ·High surge capacity. MECHANICAL CHARACTERISTICS ·in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ·Metal silicon junction, majority carrier conduction. ·High current capacity, low forward voltage drop. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM IF(AV) IFSM DC Blocking Voltage Average Rectified Forward Current (Rated VR , Square Wave, 20 KHz) @ TA = 130°C Nonrepetitive Peak Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) 50 30 150 TJ Junction Temperature -65~150 V A A ℃ Tstg Storage Temperature Range -50~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor Schottky Barrier Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Product Speci...