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MBR3045WT

ON Semiconductor

Switch Mode Power Rectifier

MBR3045WT SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinu...


ON Semiconductor

MBR3045WT

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Description
MBR3045WT SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features Dual Diode Construction; Terminals 1 and 3 may be Connected for Parallel Operation at Full Rating Guardring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature Popular TO−247 Package Pb−Free Package is Available* Mechanical Characteristics Case: Epoxy, Molded Weight: 4.3 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds MAXIMUM RATINGS Rating Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 105°C) Per Device Per Diode VRRM VRWM VR IF(AV) 45 30 15 V A Peak Repetitive Forward Current, IFRM 30 A (Rated VR, Square Wave, 20 kHz)...




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