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MBR3045WT Dataheets PDF



Part Number MBR3045WT
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Schottky Barrier Rectifier
Datasheet MBR3045WT DatasheetMBR3045WT Datasheet (PDF)

Schottky Barrier Rectifier INCHANGE Semiconductor MBR3045WT FEATURES ·Dual diode construction;terminals 1 and 3 may be connected for parallel operation at full rating ·Low forward voltage ·Guarding for stress protection ·150℃ operating junction temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Sol.

  MBR3045WT   MBR3045WT


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Schottky Barrier Rectifier INCHANGE Semiconductor MBR3045WT FEATURES ·Dual diode construction;terminals 1 and 3 may be connected for parallel operation at full rating ·Low forward voltage ·Guarding for stress protection ·150℃ operating junction temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ·Lead Temperature for Soldering Purposes: 260℃ Max. for 10 Seconds ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) IFSM IRRM TJ Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 45 Average Rectified Forward Current (Per Leg) (Total) 15 30 Peak Forward Surge Current, 8.3 ms single halfsine-wave superimposed on rated load (JEDEC method) Peak Repetitive Reverse Surge Current (2.0μs, 1.0kHz) 200 2.0 J.


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