MBR3060PT

Schottky Barrier Rectifier INCHANGE Semiconductor MBR3060PT FEATURES ·Low power loss,high efficiency ·High surge capability ·Metal silicon rectifier, majonty carrier conduction ·Guard ring for over voltage protection ·High Current Capability，low forward voltage drop ·100% avalanche tested ·Minimum Lot-to-Lot variations f or robust device performance and reliable operation APPLICATIONS ·For use in low voltage ,high frequency inverters,free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current 60 V 30 A Nonrepetitive Peak Surge Current IFSM 8.3ms single half sine-wave superimposed 200 A on rated load conditions IRRM Peak Repetitive Reverse Surge Current (2.0μs, 1.0kHz) 0.5 A TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor MBR3060PT THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.4 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL PARAMETER CONDITIONS IF= 20A ; Tc= 25℃ VF Maximum Instantaneous Forward Voltage IF= 20A ; Tc= 125℃ VR= VRWM;Tc= 25℃ IR Maximum Instantaneous Reverse Current VR= VRWM;Tc= 125℃ MAX 0.75 0.65 0.5 ...