Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR6045PT
FEATURES ·Low Forward Voltage ·Low Power Loss,High Efficie...
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR6045PT
FEATURES ·Low Forward Voltage ·Low Power Loss,High Efficiency ·High Surge Capability ·175℃ Operating Junction Temperature ·Pb-Free Package is Available ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power Supply-Output Rectification ·Power Management ·Instrumentation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR IF(AV)
IFSM
IRRM
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current
Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions
Peak Repetitive Reverse Surge Current (20μs, 1.0kHz)
45 60 500 2.0
V A A A
TJ Junction Temperature
-65~175 ℃
Tstg Storage Temperature Range
-65~175 ℃
dv/dt Voltage Rate of Change (Rated VR)
10,000 V/μs
isc website:www.iscsemi.com
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