isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -4A ·Collector-Em...
isc Silicon
PNP Darlington Power
Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -4A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -120V(Min) ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-120
VCEO
Collector-Emitter Voltage
-120
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-8
ICM
Collector Current-Peak
-16
IB
Base Current-DC
Collector Power Dissipation
PC
TC=25℃ Collector Power Dissipation
Ta=25℃
Tj
Junction Temperature
-120 20 1.75 150
Tstg
Storage Temperature Range
-65~150
UNIT V V V A A mA
W
℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
6.25 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W
MJD128
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Darlington Power
Transistor
MJD128
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0
-120
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A ,IB= -16mA
-2.0
V
VCE(sat)-2 Collector-Emitter Saturation voltage IC= -8A ,IB= -80mA
-4.0
V
VBE(sat)
Base-Emitter Satura...