THN4201

Semiconductor □ Application LNA and wide band amplifier up to GHz range THN4201 Series SiGe NPN Transistor SOT-523 Unit in mm □ Features o Low Noise Figure NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7 dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain MAG = 13.5 dB at f = 2 GHz, VCE = 3 V, IC = 20 mA MAG = 13 dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Transition Frequency fT = 16.5 GHz at VCE = 3 V, IC = 20 mA □ hFE Classification Marking AG1 AG2 hFE 125 to 300 80 to 160 □ Absolute Maximum Ratings Symbol Parameter VCBO Collector to Base Breakdown Voltage VCEO Collector to Emitter Breakdown Voltage VEBO Emitter to Base Breakdown Voltage Ic Collector Current (DC) PT Total Power Dissipation TSTG Storage Temperature TJ Operating Junction Temperature Caution : ESD sensitive device Pin Configuration Pin No Symbol 1B 2E 3C Description Base Emitter Collector □ Available Package Product Package THN4201U SOT-323 THN4201Z SOT-343 THN4201E SOT-5...