Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
THN4201 Series
SiGe NPN Transistor
SOT-523
U...
Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
THN4201 Series
SiGe
NPN Transistor
SOT-523
Unit in mm
□ Features
o Low Noise Figure NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7 dB at f = 2 GHz, VCE = 1 V, IC = 3 mA
o High Gain MAG = 13.5 dB at f = 2 GHz, VCE = 3 V, IC = 20 mA MAG = 13 dB at f = 2 GHz, VCE = 1 V, IC = 3 mA
o High Transition Frequency fT = 16.5 GHz at VCE = 3 V, IC = 20 mA
□ hFE Classification
Marking AG1
AG2
hFE 125 to 300 80 to 160
□ Absolute Maximum Ratings
Symbol
Parameter
VCBO Collector to Base Breakdown Voltage
VCEO Collector to Emitter Breakdown Voltage
VEBO Emitter to Base Breakdown Voltage
Ic Collector Current (DC)
PT Total Power Dissipation TSTG Storage Temperature
TJ Operating Junction Temperature
Caution : ESD sensitive device
Pin Configuration
Pin No
Symbol
1B
2E
3C
Description Base Emitter
Collector
□ Available Package
Product
Package
THN4201U SOT-323
THN4201Z SOT-343
THN4201E SOT-5...