THN420Z

Semiconductor THN420Z SiGe NPN Transistor □ Applications - Low noise amplifier, oscillator and buffer amplifier up to 3 GHz SOT-343 Unit in mm □ Features - High gain bandwidth product fT = 17 GHz at VCE = 2 V, IC = 15 mA fT = 20 GHz at VCE = 3 V, IC = 30 mA - High power gain |S21|2 = 16 dB at VCE = 2 V, IC = 15 mA, f = 1.5 GHz - Low noise figure NF = 1.1 dB at VCE = 2 V, IC = 5 mA, f = 1.8 GHz □ Absolute Maximum Ratings (TA = 25 ℃) Param eter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current Total Power Dissipation Operating Junction Temperature Storage Temperature Sym bol BVCBO BVCEO BVEBO IC Ptot Tj Tstg Caution : Electro Static Discharge sensitive device 13 24 Pin Configuration 1. Base 2. Emitter 3. Emitter 4. Collector Ratings 10 4.5 1.5 35 160 150 -65 ~ 150 Unit V V V mA mW ℃ ℃ 1 □ Electrical Characteristics (TA = 25 ℃) Parameter Collector Cut-off Current Emitter Cut-off Cu...