THN4301

Semiconductor □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.5dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain MAG = 12.3 dB at f = 2 GHz, VCE = 3 V, IC = 25 mA MAG = 12.0 dB at f = 2 GHz, VCE = 1 V, IC = 5 mA o High Transition Frequency fT = 15 GHz at f = 2 GHz, VCE = 3 V, IC = 25 mA THN4301 Series SOT-523 SiGe NPN Transistor Unit in mm □ hFE Classification Marking AH1 AH2 hFE 125 to 300 80 to 160 □ Absolute Maximum Ratings Symbol Parameter VCBO Collector to Base Breakdown Voltage VCEO VEBO IC PT TSTG TJ Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current (DC) Total Power Dissipation Storage Temperature Operating Junction Temperature Pin Configuration Pin No Symbol 1B 2E 3C Description Base Emitter Collector □ Available Package Product Package THN4301U SOT-323 THN4301Z SOT-343 THN4301E SOT-523 Unit : mm Dimension 2.0...