Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
□ Features
o Low Noise Figure NF = 1.5dB at f = ...
Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
□ Features
o Low Noise Figure NF = 1.5dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7dB at f = 2 GHz, VCE = 1 V, IC = 3 mA
o High Gain MAG = 12.3 dB at f = 2 GHz, VCE = 3 V, IC = 25 mA MAG = 12.0 dB at f = 2 GHz, VCE = 1 V, IC = 5 mA
o High Transition Frequency fT = 15 GHz at f = 2 GHz, VCE = 3 V, IC = 25 mA
THN4301 Series
SOT-523
SiGe
NPN Transistor Unit in mm
□ hFE Classification
Marking AH1
AH2
hFE 125 to 300 80 to 160
□ Absolute Maximum Ratings
Symbol
Parameter
VCBO Collector to Base Breakdown Voltage
VCEO VEBO
IC PT TSTG TJ
Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current (DC) Total Power Dissipation Storage Temperature Operating Junction Temperature
Pin Configuration
Pin No
Symbol
1B
2E
3C
Description Base Emitter
Collector
□ Available Package
Product
Package
THN4301U SOT-323
THN4301Z SOT-343
THN4301E SOT-523
Unit : mm Dimension 2.0...