THN4501

Semiconductor □ Application LNA and wide band amplifier up to GHz range THN4501 Series SOT-523 SiGe NPN Transistor Unit in mm □ FEATURES o Low Noise Figure NF = 1.5dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain MAG = 12.5 dB at f = 2 GHz, VCE = 3 V, IC = 30 mA MAG = 9.5 dB at f = 2 GHz, VCE = 1 V, IC = 7 mA o High Transition Frequency fT = 11 GHz at f = 2 GHz, VCE = 3 V, IC = 50 mA □ hFE Classification Marking AK1 AK2 hFE 125 to 300 80 to 160 □ Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PT TSTG TJ Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current (DC) Total Power Dissipation Storage Temperature Operating Junction Temperature Pin Configuration Pin No Symbol 1B 2E 3C Description Base Emitter Collector □ Available Package Product Package THN4501U SOT-323 THN4501Z SOT-343 THN4501E SOT-523 Unit : mm Dimension 2.0ⅹ1...