N+P Complementary Enhancement MOSFET
Features
·Low On resistance. ·+4.5V drive. ·RoHS compliant.
Si460N6+P Complementary Enhancement MOSFET
Si4606
Package D...
Description
Features
·Low On resistance. ·+4.5V drive. ·RoHS compliant.
Si460N6+P Complementary Enhancement MOSFET
Si4606
Package Dimensions
Specifications
Absolute Maximum Ratings at Ta=250C
Parameter
Symbol
Conditions
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature
VDSS VGSS
ID IDP PD PT Tch Tstg
PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm)
Ratings N-Ch P-Ch
30 -30 +20 +20 6.9 -6 30 -30 1.3 1.3 1.7 1.7
150 -55~+150
Unit
V V A A W W 0C 0C
Pin Description
1
Si4606
N-Channel Electrical Characteristics at Ta=250C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate Threshold Voltage
Static Drain-to-Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay ...
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