2SC3710A

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max)@IC= 6A ·Good Linearity of hFE ·Complement to Type 2SA1452A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3710A isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3710A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 0.3A ICBO Collector Cutoff Current VCB= 80V ; IE= 0 IEBO Emitter Cutoff Current VEB= 6V ; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 1V hFE-2 DC Current Gain IC= 6A ; VCE= 1V COB Output Capacitance IE= 0; VCB= 10V;ftest= 1MHz fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V Switching Times ton Turn-on Time tstg Storage Time tf Fall Time IC= 6A ,IB1= -IB2= 0.3A, VCC= 30V, RL= 5Ω MIN...