Power Transistor. 2SC3710A Datasheet

2SC3710A Transistor. Datasheet pdf. Equivalent

Part 2SC3710A
Description Silicon NPN Power Transistor
Feature isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Ma.
Manufacture Inchange Semiconductor
Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector 2SC3710A Datasheet
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2SC3710A
isc Silicon NPN Power Transistor
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 0.4V(Max)@IC= 6A
·Fast Switching Speed
·Complement to Type 2SA1452A
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80 V
VCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
12 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
2A
30 W
150
Tstg Storage Temperature Range
-55~150
INCHANGE Semiconductor
2SC3710A
isc websitewww.iscsemi.com
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2SC3710A
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3710A
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 0.3A
ICBO Collector Cutoff Current
VCB= 80V ; IE= 0
IEBO Emitter Cutoff Current
VEB= 6V ; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 1V
hFE-2
DC Current Gain
IC= 6A ; VCE= 1V
COB Output Capacitance
IE= 0; VCB= 10V;ftest= 1MHz
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
Switching Times
ton Turn-on Time
tstg Storage Time
tf Fall Time
IC= 6A ,IB1= -IB2= 0.3A,
VCC= 30V, RL= 5Ω
MIN TYP. MAX UNIT
80 V
0.4 V
1.2 V
10 μA
10 μA
70 240
40
220 pF
80 MHz
0.2 μs
1.0 μs
0.2 μs
hFE-1 Classifications
OY
70-140 120-240
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark





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