isc Silicon NPN Power Transistor
isc Product Specification
2SC3991
DESCRIPTION ·High Switching Speed ·High Breakdown V...
isc Silicon
NPN Power
Transistor
isc Product Specification
2SC3991
DESCRIPTION ·High Switching Speed ·High Breakdown Voltage-
: V(BR)CBO= 800 V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching
regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
800 V
VCEO
Collector-Emitter Voltage
500 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
50 A 300 W 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
isc website:www.iscsemi.com
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isc Silicon
NPN Power
Transistor
isc Product Specification
2SC3991
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 24A; ...