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2SD1640 Dataheets PDF



Part Number 2SD1640
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet 2SD1640 Datasheet2SD1640 Datasheet (PDF)

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1640 DESCRIPTION ·High DC Current Gain- : hFE = 4000(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low -frequency output amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCB.

  2SD1640   2SD1640


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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1640 DESCRIPTION ·High DC Current Gain- : hFE = 4000(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low -frequency output amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Tj Junction Temperature 3 A 15 W 1.2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1640 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA, IB= 0 100 V V(BR)CBO Collector-Base Breakdown Voltage IC= 100μA, IE= 0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A ,IB= 1mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A ,IB= 1mA ICBO Collector Cutoff Current VCB= 120V, IE= 0 1.5 V 2.0 V 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3 mA hFE DC Current Gain IC= 1A ; VCE= 10V 4000 40000 fT Current Gain-Bandwidth Product IC=50mA;VCE=10V 150 MHz  hFEClassifications Q R S 4000-10000 8000-20000 16000-40000 isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1640 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 3 isc & iscsemi is registered trademark .


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