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2SD1816 Dataheets PDF



Part Number 2SD1816
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet 2SD1816 Datasheet2SD1816 Datasheet (PDF)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1816 DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating compactness of sets ·Low collector-to-emitter saturation voltage ·High fT ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB.

  2SD1816   2SD1816


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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1816 DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating compactness of sets ·Low collector-to-emitter saturation voltage ·High fT ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 120 V 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 8 A 20 W 1.0 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1816 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 200mA VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 200mA V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10uA; IC= 0 ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE1 DC Current Gain IC= 0.5A; VCE= 5V hFE2 DC Current Gain IC= 3A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V MIN TYP. MAX UNIT 0.4 V 1.2 V 120 V 100 V 5 V 1 uA 1 uA 70 400 40 40 pF 180 MHz  hFE1 Classifications Q R S T 70-140 100-200 140-280 200-400 isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor Outline Drawing INCHANGE Semiconductor 2SD1816 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 3 isc & iscsemi is registered trademark .


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