isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1980
DESCRIPTION ·Darlington connection for high DC current...
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SD1980
DESCRIPTION ·Darlington connection for high DC current gain ·Built in resistor between base and emitter ·Built in damper diode ·Complementary
PNP types:2SB1316 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Motor drivers,LED driver,Power supply
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous 2.0 A
ICM Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
3.0 A 10 W 150 ℃
Tstg Storage Temperature Range
-55~150
℃
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isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SD1980
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDIT...
