CY7C1382BV25

1CY7C1 380B V25 PRELIMINARY CY7C1380BV25 CY7C1382BV25 512K x 36 / 1 Mb x 18 Pipelined SRAM Features Fast clock speed: 200,166, 150, 133 MHz Provide high-performance 3-1-1-1 access rate Fast OE access times: 3.0,3.2, 3.4, 3.8, 4.2 ns Optimal for depth expansion 2.5V (±5%) Operation Common data inputs and data outputs Byte Write Enable and Global Write control Chip enable for address pipeline Address, data, and control registers Internally self-timed WRITE CYCLE Burst control pins (interleaved or linear burst se- quence) Automatic power-down for portable applications High-density, high-speed packages JTAG boundary scan for BGA packaging version Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. The CY7C1382BV25 and CY7C1380BV25 SRAMs integrate 1,048,576x18...